发明名称 Directed gas injection apparatus for semiconductor processing
摘要 A method and system ( 1 ) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system ( 20 ) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow ( 25 ) can be improved. This improvement is especially beneficial in high aspect ratio processing.
申请公布号 US7217336(B2) 申请公布日期 2007.05.15
申请号 US20030482210 申请日期 2003.12.29
申请人 TOKYO ELECTRON LIMITED 发明人 STRANG ERIC J.
分类号 H01L21/306;C23C16/455;C23C16/52;G06F19/00;H01J37/32;H01L21/00;H01L21/311 主分类号 H01L21/306
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