Silicon carbide semiconductor device and method for fabricating the same

摘要

An inventive semiconductor device is provided with: a silicon carbide substrate 1; an n-type high resistance layer 2; well regions 3 provided in a surface region of the high resistance layer 2; a p⁺ contact region 4 provided within each well region 3; a source region 5 provided to laterally surround the p⁺ contact region 4 within each well region 3; first source electrodes 8 provided on the source regions 5 and made of nickel; second source electrodes 9 that cover the first source electrodes 8 and that are made of aluminum; a gate insulating film 6 provided on a portion of the high resistance layer 2 sandwiched between the two well regions 3; a gate electrode 10 made of aluminum; and an interlayer dielectric film 11 that covers the second source electrodes 9 and the gate electrode 10 and that is made of silicon oxide.