发明名称 |
Semiconductor device and method of manufacturing the semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device to improve structural stability of a semiconductor device in a silicidation process, a substrate is provided to have an active region defined by an isolation layer. An etching mask is formed on the active region and the isolation layer to have a silicidation prevention pattern that at least partially exposes the active region. A gate structure is formed on the exposed active region. A gate spacer is formed on a sidewall of the gate structure positioned on the silicidation prevention pattern. Source/drain regions are formed on the active region using the gate spacer as a mask to thereby form the semiconductor device. Since voids may not be generated in a transistor of the semiconductor device or intrusion of the transistor may be prevented in the silicidation process, the semiconductor device including the transistor may have improved reliability and electrical characteristics.
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申请公布号 |
US7217622(B2) |
申请公布日期 |
2007.05.15 |
申请号 |
US20040024252 |
申请日期 |
2004.12.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
MAEDA SHIGENOBU;KIM YOUNG-WUG |
分类号 |
H01L21/336;H01L21/76;H01L21/84;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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