发明名称 |
Divided drain implant for improved CMOS ESD performance |
摘要 |
A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates and sources coupled together and with the drains placed next to each other and separated as a divided drain implant structure. The divided drain implant structure further comprises at least two drain implant regions separated by a lightly doped drain region and a halo implant region formed underneath. At least one of the drain implant regions is coupled to an input/output pad of a circuit.
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申请公布号 |
US7217984(B2) |
申请公布日期 |
2007.05.15 |
申请号 |
US20050156063 |
申请日期 |
2005.06.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG SHAO-CHANG;CHU YU-HUNG |
分类号 |
H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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