| 摘要 |
The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material ( 1 ) is placed on a substrate n<+> (or p<+>) ( 2 ). p<+> (or n<+>)< >ions are then implanted on the external face ( 11 ) of the material ( 1 ) in order to form a p<+>/i/n<+> structure after annealing. Ohmic contacts ( 12 ) are subsequently disposed on the two faces and individual detectors (pixels) ( 13 ) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material ( 1 ) has a thickness d' that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material ( 1 ). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.
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