发明名称 |
METHODS OF FORMING A PHASE CHANGE MATERIAL LAYER AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME AND PHASE CHANGE MEMORY DEVICE FORMED FROM USING THE SAME |
摘要 |
<p>A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.</p> |
申请公布号 |
KR100717286(B1) |
申请公布日期 |
2007.05.15 |
申请号 |
KR20060036209 |
申请日期 |
2006.04.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, SUNG LAE;LEE, CHOONG MAN;LEE, JIN IL;LIM, SANG WOOK;PARK, HYE YOUNG;PARK, YOUNG LIM |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|