| 摘要 |
A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apart from the emitter regions with a predetermined space through the base layer; the base layer formed in a concentric circular pattern on the upper part; the emitter regions and collector regions provided with contacts respectively; and emitter and collector wiring layers connected to the contacts.
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