发明名称 |
Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection |
摘要 |
A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.
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申请公布号 |
US7218554(B2) |
申请公布日期 |
2007.05.15 |
申请号 |
US20050160097 |
申请日期 |
2005.06.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSU CHENG-HSING;WU CHAO-I;LIEN HAO-MING;HSUEH MING-HSIANG |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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地址 |
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