发明名称 Independent chip select for SRAM and DRAM in a multi-port RAM
摘要 A multi-port RAM (MPRAM) having a SRAM and a DRAM on a single chip. Separate pins are provided on the chip to supply independent chip select signals for the SRAM and the DRAM. When the SRAM chip select signal is at a high level, a clock generator is prevented from producing an internal clock signal for the SRAM. As a result, no SRAM operation is performed in response to a SRAM command. Similarly, when the DRAM chip select signal is high, a clock generator produces no internal clock signal for the DRAM. As a result, DRAM operations are prevented from being performed in response to DRAM commands.
申请公布号 US6157990(A) 申请公布日期 2000.12.05
申请号 US19980012460 申请日期 1998.01.23
申请人 MITSUBISHI ELECTRONICS AMERICA INC. 发明人 RANDOLPH, WILLIAM L.;BLANKENSHIP, DENNIS;CASSADA, RHONDA
分类号 G06F12/08;G11C7/10;G11C7/22;G11C8/08;G11C8/12;G11C8/16;G11C11/00;(IPC1-7):G06F13/00 主分类号 G06F12/08
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