TECHNIQUES FOR FORMING CONTACT HOLES THROUGH TO A SILICON LAYER OF A SUBSTRATE,申请号KR20017002802-传众专利搜索

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发明名称	TECHNIQUES FOR FORMING CONTACT HOLES THROUGH TO A SILICON LAYER OF A SUBSTRATE
摘要
申请公布号	KR100718072(B1)	申请公布日期	2007.05.14
申请号	KR20017002802	申请日期	2001.03.02
申请人		发明人
分类号	H01L21/3065	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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