NON-VOLATILE FERROELECTRIC MEMORY DEVICE USING SILICON SUBSTRATE, AND METHOD FOR MANUFACTURING THEREOF AND METHOD FOR REFRESH THEREOF,申请号KR20060070964-传众专利搜索

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发明名称	NON-VOLATILE FERROELECTRIC MEMORY DEVICE USING SILICON SUBSTRATE, AND METHOD FOR MANUFACTURING THEREOF AND METHOD FOR REFRESH THEREOF
摘要
申请公布号	KR100720231(B1)	申请公布日期	2007.05.14
申请号	KR20060070964	申请日期	2006.07.27
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KANG, HEE BOK
分类号	H01L27/105;H01L27/115	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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