发明名称 |
Structure for thin film interconnect |
摘要 |
This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fabrication of the multilayer thin film structures. The individual thin film structure is termed a compensator, and functions as both a ground/reference plane and as a stabilizing entity with regard to dimensional integrity. The compensator is comprised primarily of a metal sheet having a metallized via pattern and high-temperature stable polymer as an insulator.
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申请公布号 |
US6165629(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19930006414 |
申请日期 |
1993.01.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SACHDEV, KRISHNA GANDHI;KELLNER, BENEDIKT MARIA JOHANNES;MCGUIRE, KATHLEEN MARY;SORCE, PETER JEROME |
分类号 |
H01L23/522;C08G73/10;H01L21/48;H01L21/768;H01L23/538;H05K1/05;H05K3/00;H05K3/38;H05K3/40;H05K3/42;H05K3/44;H05K3/46;(IPC1-7):B32B15/08 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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