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发明名称
METHOD FOR FORMING RECESS GATE OF SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100720250(B1)
申请公布日期
2007.05.14
申请号
KR20050101365
申请日期
2005.10.26
申请人
HYNIX SEMICONDUCTOR INC.
发明人
CHANG, HYO SIK
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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