| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask blank and a transfer mask compliant with fine design rules as a size of 65 nm or less. <P>SOLUTION: The mask blank 1 comprises a light-shielding film 12 and a resist film 14 layered on a light-transmitting substrate 11, wherein the etching rate of the resist film 14 in dry etching using an etching gas containing a chlorine-based gas is 0.5 time or less as the etching rate of the light-shielding film 12 in the same dry etching. Therefore, even when the film thickness of the resist film 14 is decreased to suppress the aspect ratio to 4 or lower, preferably to 3 or lower so as to prevent collapse of a resist pattern 140 during developing the resist film 14 in compliance with design rules of about 65 nm line width or space width, the resist pattern 140 is not etched but functions as a mask until etching in the light-shielding film 12 is completed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
