| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution capable of suitably setting the polishing speeds of a barrier metal layer (barrier material), an insulating film layer (insulating material), and a metal wiring layer (metallic wiring material), in barrier CMP to be performed continuously to bulk polishing of metal wires in the case of manufacturing a semiconductor device; capable of suppressing the generation of final steps such as dishing and erosion; and capable of stably storing a polishing solution component while maintaining high dispersion. <P>SOLUTION: The polishing solution for polishing a barrier material on an inter-layer insulating material has pH of 5.5 to 8.5 and is an aqueous solution of a dicarboxylic acid compound in which silicon dioxide particles are dispersed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
