| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a reliable semiconductor device, whose operation speed is high, and excellent in electrical characteristics to prevent disconnection, in the configuration using a porous insulating film. SOLUTION: A non-porous insulating film 3 containing a void formation material is formed on a substrate 1. A connection hole 7 is formed to apply an etching process on the insulating film 3. Then, the void formation material in the insulating film 3 is decomposed and removed in a thermal process, so that a hole A is formed in the insulating film 3 to provide a porous insulating film 3A. COPYRIGHT: (C)2007,JPO&INPIT
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