SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate having a ferroelectric thin film wherein the grain diameters are≥400 nm on an amorphous silica substrate; and a method for manufacturing the same. SOLUTION: In the semiconductor substrate, a carbon-based film having such a thickness that the number of carbon atoms is 1E17/m2to 1E22/m2is formed on the amorphous silica substrate, and a Sn single crystal film wherein the grain diameters are≥400 nm is vapor deposited on the carbon-based film. The method for manufacturing the semiconductor substrate comprises forming the carbon-based film composed of carbon or a hydrocarbon and having such a thickness that the number of carbon atoms is 1E17/m2to 1E22/m2on the amorphous silica substrate, and then vapor depositing Sn on the carbon-based film while heating the substrate to a temperature of≤200°C to form a film of Sn single crystal including grains each having a grain diameter of≥400 nm. COPYRIGHT: (C)2007,JPO&INPIT