发明名称 |
Etchant and method for fabricating a semiconductor device using the same |
摘要 |
An etchant for etching at least one of a titanium material and silicon oxide includes a mixed liquid of HCl, NH4F and H2O. When the etchant has a NH4F/HCl molar ratio of less than one, only the titanium material is etched. When the etchant has a NH4F/HCl molar ratio of more than one, only silicon oxide is etched. When the etchant has a NH4F/HCl molar ratio of one, the titanium material and silicon oxide are etched at the same rate.
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申请公布号 |
US2001044208(A1) |
申请公布日期 |
2001.11.22 |
申请号 |
US20000484473 |
申请日期 |
2000.01.18 |
申请人 |
ISHIDA HIDETOSHI;NOMA ATSUSHI;UEDA DAISUKE |
发明人 |
ISHIDA HIDETOSHI;NOMA ATSUSHI;UEDA DAISUKE |
分类号 |
H01L21/308;C09K13/08;H01L21/306;(IPC1-7):H01L21/302;C09K13/00;H01L21/461 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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