| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit where the generation of leak current is suppressed, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor integrated circuit having a first gate electrode formed through a first gate insulating film on a semiconductor substrate, a first dopant diffusion region self-alignedly formed to the first gate electrode inside the semiconductor substrate, a contact connected to the first dopant region, a second electrode formed through a second gate insulating film on the semiconductor substrate, a second dopant diffusion region self-alignedly formed to the gate electrode inside semiconductor substrate, and a shared contact commonly connected to the second gate electrode and the second dopant diffusion region. The dielectric constant of the second gate insulating film is bigger than that of the first gate insulating film. <P>COPYRIGHT: (C)2007,JPO&INPIT |
