| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory which allows the memory cell size to be more reduced. <P>SOLUTION: The semiconductor memory comprises a plurality of memory cells MC connected in series between first and second nodes, the memory cell MC comprises a parallel connected magnetoresistance effect element 11 and a switching transistor 12, the magnetoresistance effect element 11 comprises a magnetizing direction-fixed layer 22, a magnetizing direction-variable recording layer 21, and a nonmagnetic layer 23 provided between the fixed layer 22 and the recording layer 21. It further comprises a spin-injection memory cell block BLK, a bit line BL connected to the first node through a selective transistor 13, a plurality of word lines WL connected to the gate of the switching transistor 12, and a source line 14 connected to the second node. <P>COPYRIGHT: (C)2007,JPO&INPIT |
