| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently inject electric charge into the desired portion of a laminated film of MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type non-volatile semiconductor memory device, so that information can be written in. <P>SOLUTION: The memory device has a second conductive source region 12 and drawing region 13 which are arranged separately from each other on a first conductive type semiconductor substrate 11. In a part of channel region 17 between these two regions, a high concentration area 16 is provided which comes into contact only with either one of the source region 12 or the drain region 13 and has higher impurity concentration than that of the semiconductor substrate 11. Out of plurality of insulating films constituting a laminated film 14 on the channel region 17, a top oxide film on the top layer has an area where the film is made thinner than the other parts by the portion two-dimensionally overlapped with the high concentration region 16 to form a step portion 20. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
