发明名称 FABRICATION METHOD OF PHOTOMASK-BLANK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a fabrication method of a photomask-blank that has a reduced number of particle-caused defects. <P>SOLUTION: A susceptor 11 having the most basic structure has a three-layer structure including a first and a second transparent quartz part 11a and an opaque quartz part 11b sandwiched therebetween. For example, the opaque quartz part 11b is made of "foamed quartz". The opacity to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part 11b, taking into consideration the composition or thickness of a thin film formed on a substrate 10 and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may by composed of a stack of a plurality of opaque quartz layers having different opacities, or of a stack of n layers comprising light transmitting materials (wherein n is a natural number equal to or more than 2), and at least one of the n layers has an opacity different from that of other layers. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007114680(A) 申请公布日期 2007.05.10
申请号 JP20050308618 申请日期 2005.10.24
申请人 SHIN ETSU CHEM CO LTD 发明人 FUKUSHIMA CHIKAYASU;YOSHIKAWA HIROKI;KANEKO HIDEO
分类号 C23C14/06;G03F1/32;G03F1/54;G03F1/68 主分类号 C23C14/06
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