| 摘要 |
PROBLEM TO BE SOLVED: To provide a patterning method of a film which uses a specific gas as an etchant, can pattern the film into such a tapered shape that the distance between the processed ends of the film becomes shorter as it goes away from the substrate without strictly controlling an additive amount of the gas, and can make an angle of the taper a desired one. SOLUTION: In the patterning method of a film in one aspect; films 4 and 5 are formed on the substrate, a first masking layer 10 is formed on the films 4 and 5, and a second masking layer 11 is formed on the first masking layer 10. Then, the first and second masking layers 10 and 11 are so patterned that the second masking layer 11 may have an eave hanging the edge of the first masking layer 10. In a state that the first and second masking layers 10 and 11 are patterned above the films 4 and 5, the films 4 and 5 are patterned by etching. COPYRIGHT: (C)2007,JPO&INPIT
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