发明名称 SiC MOLD
摘要 PROBLEM TO BE SOLVED: To provide an SiC mold superior in durability, never having a recessed part or the like on its surface, high in precision, and at a low cost. SOLUTION: The SiC mold comprises a substrate which consists of an SiC (silicon carbide) sintered body and a polycrystalline SiC film which is formed by vapor phase growing or liquid phase growing on the substrate, of which the surface is polished into a mirror surface, and uneven patterns are formed on the surface of the polycrystalline SiC film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007112648(A) 申请公布日期 2007.05.10
申请号 JP20050304128 申请日期 2005.10.19
申请人 NTT ADVANCED TECHNOLOGY CORP;NTT-AT NANOFABRICATION CORP 发明人 OKADA IKUO;TAKAHASHI MITSUTOSHI;KONO MASARU
分类号 C03B11/00;B82B1/00 主分类号 C03B11/00
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