| 摘要 |
Aiming at improving productivity of the semiconductor devices and at improving the product yield, a method of the present invention fabricates a semiconductor device by using, as a photomask, a first photomask 106 having a first rectangular pattern 104 a obtained by dividing a mask pattern, and a second photomask 108 having a second rectangular pattern 104 b obtained by dividing the mask pattern, wherein the method includes a first step processing a sacrificial film formed on a semiconductor substrate, using the first photomask 106 to thereby form therein a first rectangular pattern 104 a; a second step processing the sacrificial film using the second photomask 108 to thereby form therein a second rectangular pattern 104 b; and a third step etching the film formed on the semiconductor substrate, using, as a mask, the sacrificial film processed as having the rectangular pattern 104 a and the second rectangular pattern 104 b formed therein.
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