| 发明名称 |
Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 摘要 |
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge<SUB>x</SUB>Se<SUB>100-x </SUB>composition.
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| 申请公布号 |
US2007102691(A1) |
申请公布日期 |
2007.05.10 |
| 申请号 |
US20060585259 |
申请日期 |
2006.10.24 |
| 申请人 |
CAMPBELL KRISTY A;MOORE JOHN T |
发明人 |
CAMPBELL KRISTY A.;MOORE JOHN T. |
| 分类号 |
H01L27/105;H01L47/00;G11C11/34;G11C13/02;H01L21/20;H01L27/10;H01L27/148;H01L27/24;H01L45/00 |
主分类号 |
H01L27/105 |
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