| 摘要 |
A static random access memory (SRAM) cell with single event and soft error protection using ferroelectric material is presented. The SRAM cell comprises two inverters in a mutual feedback loop, with the output of each of the inverters coupled to the input of the other. A ferroelectric capacitor is coupled to the output of one of the inverters in order to induce an RC delay and provide single event upset (SEU), single event effect (SEE), single event transient (SET), and soft error protection. In addition, a method is presented where ferroelectric capacitor of the system is fabricated after the underlayers of the SRAM cell have been implemented in order to avoid substantial changes to standard underlayer processing.
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