发明名称 Radio-frequency switching circuit and semiconductor device
摘要 A common terminal 500 is connected to drains of FETs 101 and 102 via a capacitor 400. FETs 111 to 114 are serially connected, and inserted between a source of the FET 101 and a terminal 501 via a capacitor 401. Similarly, each of: FETs 121 to 124; FETs 131 to 133; FETs 141 to 143; FETs 151 to 153; and FETs 161 to 163 is inserted between the source of the FET 101 or an FET 102 and a corresponding one of terminals 502 to 506. This configuration allows a stray capacitance value of a transmission/reception path to be reduced at the time of transmission/reception, thereby obtaining a favorable radio-frequency characteristic.
申请公布号 US2007103252(A1) 申请公布日期 2007.05.10
申请号 US20060591462 申请日期 2006.11.02
申请人 NAKATSUKA TADAYOSHI;SUWA ATSUSHI;NAKAGAWA MOTOO;ADACHI MASAKAZU 发明人 NAKATSUKA TADAYOSHI;SUWA ATSUSHI;NAKAGAWA MOTOO;ADACHI MASAKAZU
分类号 H01P1/15 主分类号 H01P1/15
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