| 摘要 |
PROBLEM TO BE SOLVED: To provide etching liquid that prevents damage of a gate electrode at the time of etching a High-k film even if the High-k film of an Hf oxide system is used as a material of a gate insulating film is used and a metal is used as a material of the gate electrode, and to provide a manufacturing method of a semiconductor device using etching liquid. SOLUTION: The gate electrode 30 formed of a TiN layer 31, a Poly-si layer 32, and a W layer 33, is formed by dry etching, and wet etching using etching liquid is performed. Thus, a gate insulating film 20 is formed of an SiO<SB>2</SB>layer 21 and an HfSiO layer 22. Etching liquid comprises buffer suppressing dissociation of HF molecules and pH adjuster which raises a pH value. COPYRIGHT: (C)2007,JPO&INPIT
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