发明名称 INTEGRATED CIRCUIT STRUCTURE PROVIDED WITH PLURALITY OF CONDUCTIVE STRUCTURE LEVELS AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an integrated circuit structure having a metal wiring opening up the possibilities of new applications such as an improvement in electrical characteristics such as a conformity to a reduction in the resistance of a conductive path and an increase in current requirements, especially the manufacture of passive components having good electrical characteristics, and provide its manufacturing method. SOLUTION: An integrated circuit structure 10 including at least three conductive structure levels 28, 42 and 52 with elongate conductive paths 34 and 48 arranged is manufactured by a single damascene. Thereby, via levels conventionally used are omitted, and various technical effects and the possibilities of new applications are produced. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007116135(A) 申请公布日期 2007.05.10
申请号 JP20060255789 申请日期 2006.09.21
申请人 INFINEON TECHNOLOGIES AG 发明人 HOMMEL MARTINA;KOERNER HEINRICH;SCHWERD MARKUS;SECK MARTIN
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/52;H01L23/522;H01L27/04 主分类号 H01L21/3205
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