| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device mounted with a plurality of transistors having different drive voltages mixedly while achieving improved reliability and micronization. SOLUTION: The semiconductor device includes an element region 200 and an element isolation region 400 provided in a semiconductor layer 10. The element region includes a first conductivity type well 202, and a first transistor 200P provided in the well 202. The element isolation region includes a first isolation insulator 422 defining the element region, second isolation insulators 420 and 424 provided separately from the first isolation insulator, a second conductivity type first impurity region 410 provided in the semiconductor layer between the first isolation insulator and the second isolation insulator, a second conductivity type second impurity region 412 including the first impurity region and having a lower impurity concentration as compared with the first impurity region 0, and a second conductivity type third impurity region 414 including the second impurity region and having a lower impurity concentration as compared with the second impurity region. COPYRIGHT: (C)2007,JPO&INPIT
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