| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the crystallinity of a capacitor dielectric film of a ferroelectric capacitor can be improved, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device has: a silicon substrate 10; a first insulating film 20 formed on the silicon substrate 10; a first conductive plug 25 formed in a first contact hole 20a of the first insulating film 20; a base conductive film 30 formed on the first conductive plug 25, and on the first insulating film 20 around the plug and having a flat upper surface; a crystalline conductive film 31 formed on the base conductive film 30; and a capacitor Q of a lower electrode 33a, a capacitor dielectric film 34a of a ferroelectric material, and an upper electrode 35a sequentially stacked in this order, and formed on the crystalline conductive film 31. COPYRIGHT: (C)2007,JPO&INPIT
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