| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic material arrangement structure for a magnetic sensor capable of reducing a saturation magnetic flux density while satisfying integration of the magnetic sensor using a magnetic detecting element. SOLUTION: The magnetic sensor 7 is formed into multilayer structure, and is arranged with a substrate 8 comprising a Si (silicon) material in the lowermost layer as a sensor substrate. The first insulation film 9 is formed over the whole area of the substrate 8, on an upper face of the substrate 8. A magnetic material layer 10 is formed over the substantial whole face of the first insulation film 9, on an upper face of the first insulation film 9. The magnetic material layer 10 comprises a ferromagnetic material, for example, of NiFe (nickel iron) as a material, and serves as a role of reducing the saturation magnetic flux density of a magnetoresistance element 6 in an upper face of the magnetic material layer 10. COPYRIGHT: (C)2007,JPO&INPIT
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