Semiconductor integrated circuit devices and methods of forming the same

摘要

A semiconductor integrated circuit device includes a first interlayer insulation film having a contact therein. The contact has an upper surface and including a void therein having an open upper portion. The device further includes a plasma damage reduction unit including a lower electrode conformably on the void of the contact and on the upper surface of the contact, a dielectric film on the lower electrode, and an upper electrode on the dielectric film. The thickness of the portion of the dielectric film in the void is smaller than the thickness of the portion of the dielectric film on the upper surface of the contact.