| 发明名称 |
Method and apparatus for producing large, single-crystals of aluminum nitride |
| 摘要 |
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm<SUP>-2 </SUP>or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals. |
| 申请公布号 |
US2007101932(A1) |
申请公布日期 |
2007.05.10 |
| 申请号 |
US20060431090 |
申请日期 |
2006.05.09 |
| 申请人 |
CRYSTAL IS, INC. |
发明人 |
SCHOWALTER LEO J.;SLACK GLEN A.;ROJO J. C.;BONDOKOV ROBERT T.;MORGAN KENNETH E.;SMART JOSEPH A. |
| 分类号 |
C30B29/38;C30B11/00;H01L33/00;H01L33/02 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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