SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME

摘要

This invention provides a sputtering target comprising a first layer located on the sputtering treatment face of a sputtering target material and a second layer located on the non-sputtering treatment face of the sputtering target material, the first layer and the second layer being joined to each other through the joining interface, and a process for producing the same. The sputtering target is characterized in that the ratio among the oxygen peak value (A) at the joining interface, the oxygen peak value (B) in the first layer, and the oxygen peak value (C) in the second layer satisfy the following requirements X and Y. Requirement X: A/B = 1.5 Requirement Y: A/C = 1.5 The above constitution can provide a sputtering target which is advantageous in that spent sputtering targets which have hitherto been in many cases disposed can be reutilized, resources can be effectively utilized, the occurrence of abnormal discharge and splashing can be effectively suppressed, and a good thin film can be stably formed.