发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving reliability of the device. <P>SOLUTION: After resin 22 which contains a filler of 30-50 wt.% and has a flux activation function is supplied to a region expected to mount a semiconductor chip 2 of a wiring board 3 having a plurality of substrate side terminals 12a; the semiconductor chip 2 having a plurality of solder bumps 2a is placed on the board 3, and then thermal treatment takes place. The thermal treatment reflows solder and hardens the resin 22 to have the solder bumps 2a of the chip 2 connected with the terminals 12a of the board 3. During the thermal treatment, a load is applied to the semiconductor chip 2 by pressing the rear face 2b of the chip 2 by a rodlike member 24 while the bumps 2a are molten. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007115904(A) 申请公布日期 2007.05.10
申请号 JP20050305960 申请日期 2005.10.20
申请人 RENESAS TECHNOLOGY CORP 发明人 HANADA KENJI;SHIGEMURA KUNIO;OTA YUSUKE;NISHIDA TAKAFUMI;NAKANISHI MASAKI
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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