发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate with reduced lifting of thin films. SOLUTION: The thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed on one surface of the plastic insulation substrate; and a TFT including a second silicon nitride layer formed with a second refractive index smaller than the first refractive index. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007114789(A) |
申请公布日期 |
2007.05.10 |
申请号 |
JP20060285758 |
申请日期 |
2006.10.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE WOO JAE;KO MUNSHAKU;KIM BYOUNG-JUNE;YANG SUNG-HOON |
分类号 |
G09F9/30;G02F1/1333;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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