发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor substrate with reduced lifting of thin films. SOLUTION: The thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed on one surface of the plastic insulation substrate; and a TFT including a second silicon nitride layer formed with a second refractive index smaller than the first refractive index. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007114789(A) 申请公布日期 2007.05.10
申请号 JP20060285758 申请日期 2006.10.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE WOO JAE;KO MUNSHAKU;KIM BYOUNG-JUNE;YANG SUNG-HOON
分类号 G09F9/30;G02F1/1333;G02F1/1368;H01L21/336;H01L29/786 主分类号 G09F9/30
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