发明名称 PATTERNING METHOD, THIN FILM TRANSISTOR, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a patterning method in which metal elements composing an anti-diffusion layer are prevented from diffusing into other layer by forming a more compact anti-diffusion layer exhibiting good adhesiveness, and to provide an electronic device and an electronic apparatus. SOLUTION: The patterning method comprises a step for forming a barrier 30 on a substrate P, a step for arranging a conductive material 80a containing plating nuclei 26 in a patterning region 30a surrounded by the barrier 30, a step for forming a conductive layer 80 by calcinating the conductive material 80a arranged in the patterning region 30a, and a step for forming an anti-diffusion layer 82 on the conductive material 80a by electroless plating method using the plating nuclei 26 as a catalyst. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007115743(A) 申请公布日期 2007.05.10
申请号 JP20050302781 申请日期 2005.10.18
申请人 SEIKO EPSON CORP 发明人 TOYODA NAOYUKI
分类号 H01L21/3205;G02F1/1343;G02F1/1368;H01L21/288;H01L21/336;H01L29/786 主分类号 H01L21/3205
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