| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming an electroless plating film capable of obtaining a semiconductor device having high reliability by improving the selective precipitation properties of an electroless plating film to Cu wiring, thus attaining the reduction of an interwiring leak or the like. SOLUTION: Only Cu wiring formed on a wafer 7 is heated by a heating mechanism 10. Next, an electroless plating liquid is discharged from a nozzle 9, and an electroless plating film is formed on the Cu wiring. The formation of the electroless plating film progresses on the heated Cu wiring, and the formation of the electroless plating film is suppressed on the part other than the Cu wiring. As a result, the selective precipitation properties of the electroless plating film onto the Cu wiring can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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