发明名称 Method for fabricating an integrated circuit with a CMOS manufacturing process
摘要 An integrated circuit, which is formed on a semiconductor substrate and which comprises front-end-of-line processed electronic elements and a back-end-of-line processed wiring on top of the electronic elements. The wiring interconnects the electronic elements. The integrated circuit further comprises a highly UV-absorbing layer between the electronic elements and the wiring.
申请公布号 US2007105262(A1) 申请公布日期 2007.05.10
申请号 US20050270820 申请日期 2005.11.10
申请人 INFINEON TECHNOLOGIES AG 发明人 BIRNER ALBERT;WEBER ANDREAS;STORBECK OLAF;STADTMUELLER MICHAEL;PETHE WIELAND
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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