ETCHING METHOD AND ETCHING APPARATUS

摘要

Disclosed is an etching method for etching a layer to be processed which is formed on the surface of an object body. This etching method is characterized by comprising a resist-forming step wherein a resist layer is uniformly formed on the surface of the object body; a mask-forming step wherein a patterned etching mask is formed by providing the resist layer with a certain recess for etching; a plasma-resistant film-forming step wherein a plasma-resistant film is formed over the entire surface of the etching mask including the bottom and lateral surfaces of the recess for etching; a bottom part plasma-resistant film-removing step wherein the plasma-resistant film formed on the bottom surface of the recess for etching is removed; and a main etching step wherein the layer to be processed is etched by using the etching mask after the bottom part plasma-resistant film-removing step.