Multi-Chip Semiconductor Memory Device having Internal Power Voltage Generating Circuit with reducing current consumption

摘要

A multi-chip semiconductor memory device includes of a plurality of memory chips sharing a predetermined chip enable signal. Each of the plurality of memory chips includes an active internal power supply generation circuit configured to convert an external power supply voltage into an internal power supply voltage and to be disabled in response to deactivation of a predetermined drive control signal. Each of the plurality of memory chips also includes a conversion control circuit for generating the drive control signal, wherein the drive control signal is deactivated in an interval in which any of the plurality of memory chips is in an active interval.