MEMORY MATRIX COMPOSED OF MEMORY CELLS EACH CONSTITUTED BY A TRANSISTOR AND A MEMORY ELEMENT CONNECTED IN PARALLEL

摘要

A memory matrix (10) in an electronic circuit comprises rows and columns of cells (100), each cell comprising an access control transistor (106) and a memory circuit element (104). Each column comprises a series arrangement (102) of main current channels of a plurality of the access control transistors (106). The memory element (104) in each cell (100) is coupled in parallel to the main current channel of the access control transistor (106) of the cell (100). Word lines (14) are coupled to control electrodes of the access control transistors (106) in cells (100). During readout an addressed one of access control transistors (106) of the series arrangement (102) is switched to a non-conductive state and the remaining ones of the access control transistors (102) of said series arrangement (102) are switched to a conductive state during access to the memory cells (100). A sensing circuit (16) coupled to the series arrangements (102) for measuring conductivity of the series arrangements (102), which is determined mainly by the conductivity of the memory element (104) of the selected cell.