发明名称 |
Thick film photoresist composition and method of forming resist pattern |
摘要 |
A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.
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申请公布号 |
US2007105037(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20040578398 |
申请日期 |
2004.11.18 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
WASHIO YASUSHI;SAITO KOJI |
分类号 |
G03C1/00;G03F7/033;G03F7/40 |
主分类号 |
G03C1/00 |
代理机构 |
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主权项 |
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地址 |
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