发明名称 Dual path redundancy with stacked transistor voting
摘要 A method of operation and an apparatus for radiation hardening a combinational logic circuit are presented. A section of logic that is to be radiation hardened is identified. An entire logic circuit or a portion of the logic circuit may be radiation hardened. Once the section of logic is identified, a Field Effect Transistor (FET) is duplicated so as to create a voter FET. The voter FET is coupled with an original node (or signal) and a duplicated node (or signal). If a radiation event strikes either the original node or the duplicated node, the voter FET will prevent an upset from propagating to down stream logic by preventing a conduction path through the voter FET. Additionally, all of the circuitry that was duplicated in order to create the duplicated node may also undergo a radiation event without causing an upset to propagate to downstream logic.
申请公布号 US2007103185(A1) 申请公布日期 2007.05.10
申请号 US20050266447 申请日期 2005.11.03
申请人 HONEYWELL INTERNATIONAL INC. 发明人 FRIEDMAN MARK E.
分类号 H03K19/007 主分类号 H03K19/007
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