| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor single crystal by a CZ method capable of controlling the resistivity and the oxygen concentration of a silicon single crystal and improving the yield of the single crystal. SOLUTION: In a chamber 1, a wall 10 defining an inner wall of the chamber 1c, a crucible 2 and a heater 6 is installed. The wall 10 is composed of three members, i.e. a flow aligning member 11 at a single crystal side, a flow aligning member 12 at a melt surface side, and a flow aligning member 13 at a heater side, and these members are connected to form a purge gas passage 100. When a semiconductor single crystal is pulled up, the flow velocity of a purge gas passing in the vicinity of the melt surface in the quartz crucible 3 is controlled to be 0.2-0.35 m/min by a purge gas introducing means. COPYRIGHT: (C)2007,JPO&INPIT |
