| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where history effect can be suppressed even if body potential is not controlled in accordance with on/off states of a transistor. SOLUTION: The semiconductor device 100 is provided with an inverter circuit 50 comprising a p-type SOI (Silicon-On-Insulator) transistor 10 and an n-type SOI transistor 20 and with an input terminal Vin. The device is also provided with a p-type SOI transistor 60 for complement which is connected to the p-type SOI transistor 10 in parallel, an n-type SOI transistor 70 for complement which is connected to the n-type SOI transistor 20 in parallel, a first inductance 65 whose one end is connected to a gate electrode of the p-type SOI transistor 60 and whose other end is connected to the input terminal Vin, and a second inductance 75 whose one end is connected to a gate electrode of the n-type SOI transistor 70 and whose other end is connected to the input terminal Vin. COPYRIGHT: (C)2007,JPO&INPIT
|
