发明名称 |
METHOD OF MANUFACTURING A NANOWIRE DEVICE |
摘要 |
The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.
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申请公布号 |
US2007105321(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20060533892 |
申请日期 |
2006.09.21 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
LEE KOOK-NYUNG;SEONG WOO KYEONG;JUNG SUK-WON;KIM WON-HYO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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