| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element comprising a nano dot and a method for manufacturing the same. SOLUTION: The memory element comprises an oxide layer formed by a resistance-transformed substance, a lower electrode, an oxide layer formed on the lower electrode including a transition metal oxide, nano-dots formed in the oxide layer and integrating the current paths in the oxide layer into a single unit, and an upper layer formed on the oxide layer. Consequently, it is possible to stabilize a reset current by integrating the current paths in the oxide layer into a single unit. COPYRIGHT: (C)2007,JPO&INPIT
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